Silicon Carbide Plate
  • Silicon Carbide PlateSilicon Carbide Plate
  • Silicon Carbide PlateSilicon Carbide Plate
  • Silicon Carbide PlateSilicon Carbide Plate

Silicon Carbide Plate

You can rest assured to buy Silicon Carbide Plate from our factory and we will offer you the best after-sale service and timely delivery. And have gained the trust of customers in many countries at home and abroad due to their obvious advantages in terms of product quality and delivery time. Nextgen Advanced Materials supplies sintered silicon carbide refractory plates, reaction bonded SiC ceramic plates and recrystallized SiC plates. Our recrystallized SiC products have a high purity, while our reaction bonded and sintered silicon carbide plates have a high mechanical strength. Customization is available too.

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Product Description

You can rest assured to buy Nextgen Silicon Carbide Plate from our factory and we will offer you the best after-sale service and timely delivery. And have gained the trust of customers in many countries at home and abroad due to their obvious advantages in terms of product quality and delivery time. Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. Silicon Carbide Plate has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide ceramic is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.

We produce sintered SiC plates, reaction bonded SiC plates and recrystallized SiC plates. Our recrystallized SiC products have high purity, while our reaction bonded and sintered silicon carbide plates have high mechanical strength.


Specifications

Recrystallized SiC Purity Max. Working Temp. (`C) Bulk Density (g/cm3) Appearance Porosity Flexural strength (MPa) Compressive strength (MPa) Thermal expansion (10^-6/`C) Thermal conductivity (W/m.K) Main characteristics
Sintered SiC 99.50% 1650 2.7 <15% 110 >300 4.6 (1200`C) 35~36 High temp. resistance.
High purity
Reaction Bonded SiC 98% 1550 3.1 2.5 400 2200 4.0 (<500`C) 110 Chemical Resistance



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